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Publikationen von Prof. Dr.-Ing. Hans-Martin Rein
1.) H.-M. Rein: "Der Umschaltvorgang bei Transistor-Kippstufen – Die astabile Kippstufe", AEÜ 19 (1965), pp. 411-423.
2.) H.-M. Rein: "Der Umschaltvorgang bei Transistor-Kippstufen – Die bistabile Kippstufe", AEÜ 19 (1965), pp. 525-534.
3.) H.-M. Rein, F. Weitzsch, J. Dosse: "Die Rückwärtsstromverstärkung bei Transistoren und ihr Einfluß auf die Elemente im Ersatzschaltbild von Giacoletto", AEÜ 20 (1966), pp. 73-81.
4.) H.-M. Rein, R. Zühlke: "Ein Beitrag zur Frequenz- und Stromabhängigkeit des Verstärkungs-Bandbreite-Produkts von legierten Flächentransistoren", AEÜ 22 (1968), pp. 66-78.
5.) H.-M. Rein: "Der Eingangswiderstand von Transistoren bei schnellen Schaltvorgängen", AEÜ 22 (1968), pp. 322-336.
6.) H.-M. Rein: "Randverdrängung und Einschnürung bei Transistoren mit zylindrischer Geometrie", Electronics Letters 4 (1968), pp. 553-554.
7.) H.-M. Rein, D. Straub: "SECL – Digitale integrierte Schaltungen mit besonders kleinen Schaltzeiten", Electronik Industrie 3 (1971), pp. 26-31.
8.) H.-M. Rein, D. Straub: "SECL – An advanced high speed integrated circuit family", IEEE '71 International Convention, März 1971, New York; Digest, pp. 140-141.
9.) H.-M. Rein, H. Brüchmann: "Analogtransistor zur Simulation integrierter Schaltungen", Int.Elektronische Rundschau 25 (1971), pp. 227-231.
10.) R. Gereth, H.-M. Rein: "Problems related to advanced integrated circuits", Solid State Devices, London 1971, pp. 45-65.
11.) H.-M. Rein, T. Schad, R. Zühlke: "Einschnüreffekt bei Transistoren mit Streifengeometrie", Electronics Letters 7 (1971), pp. 757-758.
12.) H.-M. Rein: "Problem schneller integrierter Schaltungen", Frequenz 26 (1972), pp. 30-39.
13.) H.-M. Rein, T. Schad, R. Zühlke: "Der Einfluss des Basisbahnwiderstandes und der Ladungsträgermultiplikation auf das Ausgangskennlinienfeld von Planartransistoren", Solid-State Electronics 15 (1972), pp. 481-500.
14.) H.-M. Rein, K. Wörner, H. Clauss: "Integrierte Subnanosekunden-Schaltkreise mit kleiner Verlustleistung und wenig Komponenten", NTZ 25 (1972), pp. 465-470.
15.) H.-M. Rein, W. Kosak, W. Kotte: "Schnelle integrierte Digitalschaltungen mit Schottky-Dioden", Wissenschaftliche Berichte AEG-Telefunken 45 (1972), pp. 130-141.
16.) H.-M. Rein, M. Zahn: "Subnanosecond pulse generator with variable pulse width using avalanche transistors", Electronics Letters 11 (1975), pp. 21-23.
17.) H.-M. Rein: "Erzeugung variabler Rechteckimpulse mit Lawinentransistoren", AEÜ 29 (1975), pp. 389-399.
18.) H.-M. Rein: "Calculation of the breakdown characteristics of bipolar transistors using a two-dimensional model", Solid-State Electronics 19 (1976), pp. 145-147.
19.) H.-M. Rein: "Improving the large signal models of bipolar transistors by dividing the intrinsic base into two lateral sections", Electronics Letters 13 (1977), pp. 40-41.
20.) R. Ranfft, H.-M. Rein: "A simple but efficient analog computer for simulation of high-speed integrated circuits", IEEE J. Solid-State Circuits 12 (1977), pp. 51-58.
21.) H.-M. Rein, R. Ranfft: "Improved feedback ECL-gate with low delay power product for the subnanosecond region", IEEE J. Solid-State Circuits12 (1977), pp. 80-82.
22.) H.-M. Rein: "Relationship between transient response and output characteristics of avalanche transistors", Solid-State Electronics 20 (1977), pp. 849-858.
23.) R. Ranfft, H.-M. Rein: "Analog simulation of bipolar-transistor circuits", Simulation (1977), pp. 75 78.
24.) K. Wörner, H. Clauss, H.-M. Rein, A. Kostka: "A monolithic GHz to KHz frequency divider combining ECL and I2L techniques", ESSCIRC '78, Amsterdam, Sept. 1977; Dig. Techn. Papers, pp. 73-74.
25.) H.-M. Rein, H. v. Rohr, P. Wennekers: "A contribution to the current gain temperature dependence of bipolar transistors", Solid-State Electronics 21 (1978), pp. 439-442.
26.) R. Ranfft, H.-M. Rein: "Optimization and comparison of various subnanosecond bipolar IC's with low power dissipation", ESSCIRC '80, Grenoble, Sept. 1980; Dig. Techn. Papers, pp. 190-192.
27.) H.-M. Rein, R. Ranfft: Integrierte Bipolarschaltungen (Bd. 13 der Reihe Halbleiter-Elektronik), 320 Seiten, 198 Abbildungen, Berlin, Heidelberg, New York, Springer 1980.
28.) R. Ranfft, H.-M. Rein: "High-speed bipolar logic circuits with low power consumption for LSI – a comparison", IEEE J. Solid-State Circuits 17 (1982), pp. 703-712.
29.) R. Ranfft, H.-M. Rein: "A simple optimization procedure for bipolar subnaosecond IC's", Microelectronics Journals 13 (1982), Nr. 4, pp. 23-28.
30.) J. Burkhart, B. Rall, H.-M. Rein, K. Schlüter: "A bipolar 4 x 4 crosspoint array for 140 Mbit/s data rates", ESSCIRC'82, Brüssel, Sept. 1982; Dig. Techn. Papers, pp. 13-16.
31.) H.-M. Rein: "Proper choice of the measuring frequency for determining fT of bipolar transistors", Solid-State Electronics 26 (1983), pp. 75-82.
32.) H.-M. Rein, D. Daniel, R. Derksen, U. Langmann, B. G. Bosch: "Design and implementation of a Gbit/s bipolar multiplexer IC", ESSCIRC '83, Lausanne, Sept. 1983; Dig. Techn. Papers, pp. 85-88.
33.) H.-M. Rein: "A simple method for separation of the internal and external (peripheral) currents of bipolar transistors", Solid-State Electronics 27 (1984), pp. 625-632.
34.) H.-M. Rein, D. Daniel, R. Derksen, U. Langmann, B. G. Bosch: "A time division multiplexer IC for bit rates up to 2 Gbit/s", IEEE J. Solid-State Circuits 19 (1984), pp. 306-310.
35.) H.-M. Rein: "Entwurf einer integrierten 16x16 Koppelmatrix mit geringem Leistungsverbrauch für eine Bitrate von 280 Mbit/s", AEÜ 38 (1984), pp. 345-354.
36.) H.-M. Rein, R. Derksen: "An integrated bipolar 4:1 time-division multiplexer for bit rates up to 3Gbit/s", Electronics Letters 20 (1984), pp. 546-548.
37.) M. Schröter, H.-M. Rein: "Two-dimensional modeling of high-speed bipolar transistors at high curent densities using the Integral Charge-Control Relation", ESSDERC'84, Lille, Sept. 1984, Dig. Techn. Papers, pp. 334-337, veröffentlicht in Physika 129 B (1985), pp. 334-337.
38.) R. Derksen, H.-M. Rein, J. Vathke: "Integrated bipolar master/slave D-flip-flop with multiplexing capability for Gbit/s operation", Electronics Letters 20 (1984), pp. 628-630.
39.) H.-M. Rein, H. Stübing, M. Schröter: "Verification of the integral charge-control relation for high-speed bipolar transistors at high current densities", IEEE Trans. Electron Devices 32 (1985), pp. 1070-1076.
40.) R. Derksen, H.-M. Rein, K. Wörner: "A monolithic 5 GHz frequency divider IC fabricated with a standard bipolar technology", ESSCIRC '85, Toulouse, Sept. 1985; Dig. Techn. Papers, pp. 396-400.
41.) R. Derksen, H.-M. Rein, K. Wörner: "Monolithic integration of a 5.3 GHz regenerative frequency divider using a standard bipolar technology", Electronics Letters 21 (1985), pp. 1037-1039.
42.) R. Reimann, H.-M. Rein: "A bipolar 4:1 time-division multiplexer IC operating up to 5.5 Gb/s", ISSCC '86, Anaheim (USA), Feb. 1986, Dig. Techn. Papers, pp. 186-187.
43.) H.-M. Rein, R. Reimann: "3,8 Gbit/s bipolar master/slave D-flip-flop IC as a basic element for high-speed optical communication systems", Electronics Letters 22 (1986), pp. 543-544.
44.) R. Reimann, H.-M. Rein: "A 4:1 time-division multiplexer IC for bit rates up to 6 Gbit/s based on a standard bipolar technology", IEEE J. Solid-State Circuits 21 (1986), pp. 785-789.
45.) H.-M. Rein, R. Reimann: "6 Gbit/s multiplexer and regenerating demultiplexer ICs for optical transmission systems based on a standard bipolar technology", Electronics Letters 22 (1986), pp. 988-990.
46.) H.-M. Rein, R. Reimann: "Monolithisch integrierter bipolarer 4:1 Zeitmultiplexer für Bitraten bis 5,5 Gbit/s", NTG-Fachtagung: Mikroelektronik für die Informationstechnik, Sept.1986, Berlin. Published in: NTG-Fachberichte 96, pp. 267-272.
47.) R. Reimann, H.-M. Rein: "A 4 Gb/s limiting amplifier for optical-fiber receivers", ISSCC '87, New York, Feb. 1987, Dig. Techn. Papers, pp. 172-173, 387.
48.) H. Stübing, H.-M. Rein: "A compact physical large-signal model for high-speed bipolar transistors at high current densities - part I: One-dimensional model", IEEE Trans. Electron Devices 34 (1987), pp. 1741-1751.
49.) H.-M. Rein, M. Schröter: "A compact physical large-signal model for high-speed bipolar transistors at high current densities - part II: Two-dimensional model and experimental results“, IEEE Trans. Electron Devices 34 (1987), pp. 1752-1761.
50.) R. Reimann, H.-M. Rein: "Bipolar high-gain limiting amplifier IC for optical-fiber receivers operating up to 4 Gbit/s", IEEE J. Solid-State Circuits 22 (1987), pp. 504-511.
51.) P. Weger, R. Reimann, H.-M. Rein, L. Treitinger: "Static 7 GHz frequency divider IC based on a 2-μm Si bipolar technology", Electronics Letters 23 (1987), pp. 192-193.
52.) H.-M. Rein: "Gigabit/s silicon bipolar ICs for future optical-fibre transmission systems", ESSCIRC'87, Bad Soden (Germany), Sept. 1987 (invited paper); Dig. Tech. Papers, pp. 183-192.
53.) P. Weger, H.-M. Rein: "Speed-power relation of modern bipolar technology", ESSDERC '87, Bologna, Sept. 1987, Dig. Tech. Papers, pp. 1051-1054.
54.) R. Derksen, H.-M. Rein: "7.3 GHz dynamic frequency dividers monolithically integrated in a standard bipolar technology", IEEE Trans. Microwave Theory and Techniques 36 (1988), pp. 537-541.
55.) H.-M. Rein: "Multi-gigabit-per-second silicon bipolar IC’s for future optical-fiber transmission systems", IEEE J. Solid-State Circuits 23 (1988), pp. 664-675.
56.) M. Flüge, P. T. Frederiksen, B. Enning, G. Walf, H. G. Weber, H.-M. Rein: "Wideband bipolar multiplier IC with high dynamic range for use in coherent optical receivers", Electronics Letters 25 (1989), pp. 44-45.
57.) H.-M. Rein, R. Reimann, L. Schmidt: "A 3 Gb/s bipolar phase shifter and AGC amplifier", ISSCC '89, New York, Feb. 1989; Dig. Techn. Papers, pp. 144-145, 318.
58.) P. Weger, L. Treitinger, A. Wieder, H.-M. Rein: "A Si bipolar 15 GHz static frequency divider and 10 Gb/s multiplexer", ISSCC '89, New York, Feb. 1989; Dig. Techn. Paper, pp. 222-223.
59.) P. Weger, L. Treitinger, J. Bieger, H.-M. Rein: "15 GHz static frequency divider IC in silicon bipolar technology", Electronics Letters 25 (1989), pp. 513-514.
60.) H.-M. Rein, M. Schröter: "Base spreading resistance of square-emitter transistors and its dependence on current crowding", IEEE Trans. Electron Devices 36 (1989), pp. 770-773.
61.) J. Hauenschild, H.-M. Rein, P. Weger, H. Klose: "A 10 Gbit/s monolithic integrated bipolar demultiplexer for optical-fiber transmission systems fabricated in BICMOS technology", Electronics Letters 25 (1989), pp. 782-783.
62.) M. Schröter, H.-M. Rein: "Transit time of high-speed bipolar transistors in dependence on operating point, technological parameters and temperature", IEEE 1989 Bipolar Circuits and Technology Meeting, Minneapolis, Sept. 1989, Proc., pp. 250-253.
63.) J. Hauenschild, H.-M. Rein: "Time-jitter and instabilities of Gbit/s IC’s caused by transmission-line interconnections", ESSCIRC '89, Wien, Sept. 1989; Dig. Techn. Papers, pp. 226-232.
64.) R. Reimann, H.-M. Rein: "A single-chip bipolar AGC amplifier with large dynamic range for optical-fiber receivers operating up to 3 Gbit/s", IEEE J. Solid-State Circuits 24 (1989), pp. 1744-1748.
65.) H.-M. Rein, J. Hauenschild: "Suitability of present silicon bipolar IC technologies for optical fibre transmission rates about and above 10 Gbit/s", IEE Proc.-G., vol. 137 (1990), pp. 251-260.
66.) H.-M. Rein: "Silicon bipolar integrated circuits for multigigabit per second lightwave communications", OFC '90 (invited paper), New York, Dig. Techn. Papers, pp. 67.
67.) J. Hauenschild, H.-M. Rein, L. Schmidt, K. Wörner: "Versatile silicon bipolar XOR gate for signal processing up to 8 Gbit/s", Electronics Letters 26 (1990), pp. 114-115.
68.) J. Hauenschild, H.-M. Rein: "Influence of transmission-line interconnections between gigabit-per-second IC’s on time jitter and instabilities", IEEE J. Solid-State Circuits 25 (1990), pp. 763-764.
69.) L. Schmidt, H.-M. Rein: "New high-speed bipolar XOR gate with absolutely symmetrical circuit configuration", Electronics Letters 26 (1990), pp. 430-431.
70.) L. Treitinger, E. Bertagnolli, K. Ehringer, J. Popp, M. Reisch, H. Kabza, R. Schreiter, I. Kerner, R. Köpl, H. Weidlich, J. Weng, P. Weger, H.v. Philipsborn, H.-M. Rein: "Silicon bipolar technology – A versatile base for high-speed communication circuits", 1990 Zurich Seminar on Digital Communications "Electronic Circuits and Systems for Communication", Zürich, 1990, Dig. Techn. Papers, pp. 27-38.
71.) H.-M. Rein: "Silicon bipolar integrated circuits for multigigabit-per-second lightwave communications", IEEE J. Lightwave Tech., vol. 8 (1990), pp. 1371-1378.
72.) H.-M. Rein, M. Schröter: "Experimental determination of the internal base sheet resistance of bipolar transistors under forward-bias conditions", Solid-State Electronics 33 (1990),
pp. 301-308.
73.) J. Hauenschild, H.-M. Rein, W. McFarland, J. Doernberg, D. Pettengill: " 20 Gbit/s time-division multiplexer IC in silicon bipolar technology", Electronics Letters 26 (1990), pp.1824-1826.
74.) H.-M. Rein: "Integrierte Silizium-Schaltungen für die optische Nachrichtenübertragung bei extrem hohen Bitraten – Stand der Technik und Prognosen", (eingeladener Vortrag), ITG-Fachtagung: Mikroelektronik für die Informationstechnik, Berlin, Oct. 1990, Tagungsband, pp. 1-3.
75.) H.-M. Rein, L. Schmidt, K. Wörner: "A symmetrical analog wide-band multiplier IC operating up to 8 Gb/s", ISSCC '91, San Francisco, Feb. 1991, Dig. Tech. Papers, pp. 118-119, 300.
76.) J. Hauenschild, H.-M. Rein, W. McFarland, D. Pettengill: " 24 Gbit/s regenerating demultiplexer IC in silicon bipolar technology", Electronics Letters 27 (1991), pp. 502-503.
77.) J. Hauenschild, H.-M. Rein, W. McFarland, D. Pettengill: "A silicon bipolar decision circuit operating up to 15 Gb/s", IEEE J. Solid-State Circuits 26, (1991), pp. 1374-1376.
78.) J. Hauenschild, H.-M. Rein, W. McFarland, D. Pettengill: "Demonstration of retiming capability of silicon bipolar time-division multiplexer operating to 24 Gbit/s", Electronics Letters 27 (1991), pp. 978-979.
79.) H.-M. Rein, J. Hauenschild, W. McFarland, D. Pettengill: "A 23 Gbit/s Si bipolar decision circuit consisting of 24 Gbit/s MUX and DEMUX IC's", Electronics Letters 27 (1991), pp. 974-975.
80.) H.-M. Rein, L. Schmidt, K. Wörner, W. Pieper: "Wide-band symmetrical analog multiplier IC for coherent optical-fiber receivers operating up to 10 Gb/s", IEEE J. Solid-State Circuits 26, (1991), pp. 1840-1846.
81.) A. Felder, P. Weger, E. Bertagnolli, K. Ehinger, J. Hauenschild, H.-M. Rein: "A Si-bipolar 23 Gbit/s multiplexer and a 15 GHz 2:1 static frequency divider", IEEE 1991 Bipolar Circuits and Technology Meeting, Minneapolis, Sept. 1991, Proc., pp. 31-34.
82.) A. Felder, P. Weger, K. Ehninger, J. Hauenschild, H.-M. Rein: "A 15 GHz static frequency divider in a 1 μm silicon bipolar technology", European Microwave Conference, Stuttgart, 1991, Dig. Tech. Papers.
83.) R. Derksen, V. Lück, H.-M. Rein: "Stability ranges of regenerative frequency dividers employing double balanced mixers in large-signal operation", IEEE Trans. Microwave Theory and Techniques 39 (1991), pp. 1759-1762.
84.) J. Hauenschild, E. Bertagnolli, A. Felder, H.-M. Rein, H. Klose, L. Schmidt, L. Treitinger, P.Weger: "Silicon bipolar chipset with maximum data rates from 10 to 23 Gbit/s for optical communications", Electronics Letters 27 (1991), pp. 2383-2385.
85.) H.-M. Rein: “Design of a silicon bipolar laser-and line-driver IC with adjustable pulse shape and amplitude for data rates around and above 10 Gbit/s“, Frequenz 46 (1992), H. 1-2, pp. 31-37.
86.) L. Schmidt, H.-M. Rein: "Continuously variable gigahertz phase-shifter IC covering more than one frequency decade", IEEE J. Solid-State Circuits 27 (1992), pp. 854-862.
87.) H.-M. Rein, E. Bertagnolli, A. Felder, J. Hauenschild, H. Klose, L. Schmidt, L. Treitinger, P.Weger: "Ein Silizium-Chipsatz für optische Übertragungssysteme mit Datenraten von 10 bis 23 Gb/s", ITG Fachtagung: Mikroelektronik für die Informationstechnik, Stuttgart, 1992, ITG Fachberichte 119, pp. 43-48.
88.) H.-M. Rein, J. Hauenschild, M. Möller, W. McFarland, D. Pettengill, J. Doernberg: "30 Gbit/s multiplexer and demultiplexer ICs in Silicon Bipolar Technologies", Electronics Letters 28 (1992), pp. 97-98.
89.) H.-M. Rein, M. Neuhäuser, H. Wernz, V. Flaßnöcker: "A 6.5 Gbit/s transimpedance preamplifier in silicon bipolar technology for optical-fibre transmission links", Frequenz 46 (1992), pp. 174-176.
90.) B. Wedding, D. Schlump, B. Franz, B. Junginger, R. Heidemann, E. Zielinski, S. Dahl-Petersen, K. Schuesler, J. Hauenschild, H.-M. Rein: "10 Gbit/s to 260000 subscribers using optical amplifier distribution network", Proc. ICC/Supercomm '92, Chicago, 14.-18. June 1992.
91.) A. Felder, J. Hauenschild, R. Mahnkopf, H.-M. Rein: "Static silicon frequency divider for low power consumption (4 mW, 10 GHz) and high speed (160 mW, 19 GHz) ", IEEE 1992 Bipolar Circuits and Technology Meeting, Minneapolis, Oct. 1992, Proc., pp. 159-162.
92.) J. Hauenschild, A. Felder, M. Kerber, H.-M. Rein, L. Schmidt: "A 22 Gb/s decision circuit and a 32 Gb/s regenerating demultiplexer IC fabricated in silicon bipolar technology", IEEE 1992 Bipolar Circuits and Technology Meeting, Minneapolis, Oct. 1992, Proc., pp. 151-154.
93.) H.-M. Rein, M. Schröter, A. Koldehoff, K. Wörner: "A semi-physical bipolar transistor model for the design of very-high-frequency analog ICs", IEEE 1992 Bipolar Circuits and Technology Meeting, Minneapolis, Oct. 1992, Proc., pp. 217-220.
94.) H.-M. Rein, E. Bertagnolli, A. Felder, L. Schmidt: "Silicon bipolar laser and line driver IC with symmetrical output pulse shape operating up to 12 Gbit/s", Electronics Letters 28 (1992), pp. 1295-1296.
95.) H.-M. Rein: "Hochgeschwindigkeits-Schaltungen in Silizium-Bipolartechnologie", Informationstechnik it 34 (1992), pp. 209-219.
96.) M. Kerber, E. Bertagnolli, R. Mahnkopf, J. Popp, A. Felder, H.-M. Rein, A. Weisgerber, H.Klose: "A high performance BICMOS process featuring 40 GHz/21 ps", IEDM '92, San Francisco, Dec. 1992, Techn. Digest, pp. 449-452.
97.) T. F. Meister, R. Stengl, H. Meul, R. Weyl, P. Packan, A. Felder, H. Klose, R. Schreiter, J. Popp, H.-M. Rein, L. Treitinger: "Sub-20ps silicon BIPOLAR technology using selective epitaxial growth", IEDM '92, San Francisco, Dec. 1992, Techn. Digest., pp. 401-404.
98.) L. Treitinger, A. Felder, M. Kerber, T.F. Meister, E. Bertagnolli, P. Weger, R. Mahnkopf, S. Marksteiner, R. Kopl, R. Schreiter, J. Popp, H.-M. Rein, J. Hauenschild, L. Schmidt: "Silicon bipolar technology and circuits for optical communications at data rates above 10 Gb/s", OFC '93, San Francisco, Feb. 1993.
99.) A. Felder, R. Stengl, J. Hauenschild, H.-M. Rein, T.F. Meister: "25 to 40 Gb/s SI Ics in selective epitaxial bipolar technology", ISSCC '93, San Francisco, Feb. 1993, Dig. Techn. Papers, pp. 156-157, 122-123 (Suppl.).
100.) A. Koldehoff, M. Schröter, H.-M. Rein: "A compact bipolar transistor model for very-high-frequency applications with special regard to narrow emitter stripes and high current densities", Solid-State Electronics 36 (1993), pp. 1035-1048.
101.) M. Neuhäuser, H.-M. Rein, H. Wernz, A. Felder: " 13 Gbit/s Si bipolar preamplifier for optical front ends", Electronics Letters 29 (1993), pp. 492-493.
102.) A. Felder, R. Stengl, J. Hauenschild, H.-M. Rein, T.F. Meister: "25 Gbit/s decision circuit, 34Gbit/s multiplexer, and 40 Gbit/s demultiplexer IC in selective epitaxial Si bipolar technology", Electronics Letters 29 (1993), pp. 525-526.
103.) M. Schröter, M. Friedrich, H.-M. Rein: "A generalized integral charge-control relation and its application to compact models for silicon based HBTs", IEEE Trans. Electron Devices 40 (1993), pp. 2036-2046.
104.) A. Felder, R. Stengl, J. Hauenschild, H.-M. Rein, T.F. Meister: "Static frequency dividers for high operating speed (25 GHz, 170 mW) and low power consumption (16 GHz, 8 mW) in selective epitaxial Si bipolar technology", Electronics Letters 29 (1993), pp. 1072-1073.
105.) T.F. Meister, R. Stengl, A. Felder, H.-M. Rein, L. Treitinger: "Selective epitaxial bipolar technology for 25 to 40 Gb/s ICs", ESSDERC '93, Grenoble, France, Sept. 1993, Dig. Tech. Papers, pp. 203-210.
106.) E. Bertagnolli, H. Klose, R. Mahnkopf, A. Felder, M. Kerber, M. Stolz, G. Schutte, H.-M. Rein, R. Köpl: "An SOI-based high performance self-aligned bipolar technology featuring 20 ps gate-delay and a 8.6 fJ power-delay product", 1993 Symposium on VLSI Technology, Kyoto, Japan, Dig. Techn. Papers, pp. 63-64.
107.) L. Treitinger, A. Felder, R. Köpl, T.F. Meister, S. Pick, J. Popp, R. Schreiter, P. Weger, J. Wieland, H.-M. Rein: "Silicon technologies and integrated circuits for multi Gbit/s light-wave communication at 10–100 Gb/s", ECOC '93, Montreux, Sept. 1993; Dig. Techn. Papers, pp. 76-79.
108.) M. Möller, H.-M. Rein, H. Wernz: "A Si-bipolar AGC amplifier IC with high gain and wide dynamic range for 10 Gb/s optical-fiber receivers", IEEE 1994 MTT-Symposium (MMWMC), San Diego, Ca., May 1994, Digest Techn. Papers, pp. 107-110.
109.) H.-M. Rein, R. Schmid, P. Weger, T. Smith, T. Herzog, R. Lachner: "A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10 Gb/s optical-fiber links", IEEE J. Solid-State Circuits, 29 (1994), pp. 1014-1021.
110.) M. Möller, H.-M. Rein, H. Wernz: "13 Gb/s Si-bipolar AGC amplifier IC with high gain and wide dynamic range for optical-fiber receivers", IEEE J. Solid-State Circuits 29 (1994), pp. 815-822.
111.) M. Neuhäuser, H.-M. Rein, H. Wernz: "Design and realization of low-noise, high-gain Si-bipolar transimpedance preamplifiers for 10 Gb/s optical-fiber links", IEEE 1994 Bipolar Circuits and Technology Meeting, Minneapolis, Oct. 1994, Proc., pp. 163-166.
112.) M. Möller, H.-M. Rein, H. Wernz: "15 Gb/s high-gain limiting amplifier fabricated in a Si-bipolar production technology", Electronics Letters 30 (1994), pp. 1519-1520.
113.) H.-M. Rein, M. Friedrich: " Anomalies in the output conductance of SiGe HBTs", IEDM '94, San Francisco, Dec. 1994, Techn. Digest, pp. 739-741.
114.) M. Schröter, H.-M. Rein: "Investigation of very fast and high-current transients in digital bipolar IC's using both a new compact model and a device simulator", IEEE J. Solid-State Circuits, 30 (1995), pp. 551-562.
115.) M. Neuhäuser, M. Möller, H.-M. Rein, and H. Wernz: "Low-noise, high-transimpedance Si-bipolar AGC amplifier for 10 Gb/s optical-fiber links", Photonics Technology Lett. 7 (1995), pp. 549-551.
116.) A. Felder, M. Möller, J. Popp, J. Böck, M. Rest, H.-M. Rein, and L. Treitinger: "30 GHz static 2:1 frequency divider and 46 Gb/s multiplexer/demultiplexer ICs in a 0.6 μm Si-bipolar technology", 1995 Symposium on VLSI Circuits, Kyoto (Japan), June 1995, Digest Techn. Papers, pp.117-118.
117.) H.-M. Rein: "Design aspects of 10 to 40 Gb/s digital and analog Si-bipolar ICs", 1995 Symposium on VLSI Circuits (invited paper), Kyoto (Japan), June 1995, Digest Techn. Papers, pp. 49-54.
118.) H.-M- Rein: “10 to 40 Gb/s Si-bipolar ICs for optical-fiber links” (invited paper), IEEE 1995 LEOS Summer Topical Meetings (ICs for new age lightware communications), Keystone (Colorado), USA, Aug. 1995, Dig., pp. 21,22.
119.) M. Pfost, H.-M. Rein, and T. Holzwarth: "Modeling of the substrate effect in high-speed Si-bipolar ICs", IEEE 1995 Bipolar Circuits and Technology Meeting, Minneapolis, Oct. 1995, Proc. pp.182-185.
120.) M. Möller, H.-M. Rein, A. Felder, J. Popp, and J. Böck: "50 Gbit/s time-division multiplexer in Si-bipolar technology", Electronics Letters 31 (1995), pp. 1431-1433.
121.) H.-M. Rein: "Very-High-Speed Si and SiGe Bipolar ICs", ESSDERC '95 (invited paper), The Hague (The Netherlands), Sept. 1995, Proc. pp. 45-56.
122.) M. Neuhäuser, H.-M. Rein, H. Wernz: "Low-noise, high-gain Si-bipolar preamplifiers for 10 Gb/s optical-fiber links-design and realization", IEEE J. Solid-State Circuits 31 (1996), pp. 24-29.
123.) H.-M. Rein and M. Möller: "Design considerations for very-high-speed Si-bipolar ICs operating up to 50 Gb/s", IEEE J. Solid-State Circuits 31 (1996), pp. 1076-1090.
124.) A. Felder, M. Möller, J. Popp, J. Böck, and H.-M. Rein: "46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology", IEEE J. Solid-State Circuits 31 (1996), pp. 481-486.
125.) E. Gottwald, A. Felder, H.-M. Rein et al.: "Towards a 40 Gbit/s electrical time division multiplexed optical transmission system", Proc. ICCT '96, Beijing, China, May 1996, pp. 60-63.
126.) M. Pfost, H.-M. Rein, and T. Holzwarth: "Modeling substrate effects in the design of high-speed Si-bipolar ICs", IEEE J. Solid-State Circuits, 31 (1996), pp. 1493-1501.
127.) M. Pfost and H.-M. Rein: "A proposal for modeling substrate coupling in Si-MMICs and its experimental verification up to 40 GHz", Proc., IEEE Int. Conf. on Microelectronic Test Structures, Monterey, CA, March 1997, pp. 52-55.
128.) H.-M. Rein, E. Gottwald, and T. F. Meister: "Si-bipolar – A potential candidate for high-speed electronics in 20 and 40 Gb/s TDM systems?", Spring Topical Meetings, Ultrafast Electronics and Optoelectronics (invited paper), Incline Village, Nevada, USA, March 1997, Digest Techn. Papers, pp. 118-120, and OSA Trends in Optics and Photonics Series, Vol. 13: Ultrafast Electronics and Optoelectronics, pp. 124-128.
129.) M. Möller, H.-M. Rein, A. Felder, and T.F. Meister: "60 Gbit/s time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique", Electron. Lett., 33 (1997), pp. 679-680.
130.) R. Schmid, T.F. Meister, M. Neuhäuser, A. Felder, W. Bogner, M. Rest, J. Rupeter, and H.-M. Rein: "20 Gbit/s transimpedance amplifier and modulator driver in SiGe-bipolar technology", Electron. Lett., 33 (1997), pp. 1136-1137.
131.) M. Wurzer, T.F. Meister, H. Schäfer, H. Knapp, J. Böck, R. Stengl, K. Aufinger, M. Franosch, M. Rest, M. Möller, H.-M. Rein, and A. Felder: "42 GHz static frequency divider in a Si/SiGe bipolar technology", ISSCC '97, San Francisco, Feb. 1997, Dig. Tech. Papers, pp. 122-123.
132.) M. Pfost and H.-M. Rein: "Modeling and measurement of substrate coupling in Si-bipolar ICs up to 40 GHz", IEEE J. Solid-State Circuits, 33 (1998), pp. 582-591.
133.) A. Felder, M. Möller, M. Wurzer, M. Rest, T.-F. Meister, and H.-M. Rein: "60 Gbit/s regenerating demultiplexer in SiGe bipolar technology", Electron. Lett., 33 (1997), pp. 1984-1985.
134.) J. Müllrich, T.F. Meister, M. Rest, W. Bogner, A. Schöpflin, and H.-M. Rein: „40 Gbit/s transimpedance amplifier in SiGe bipolar technology for the receiver in optical-fiber TDM links“, Electron. Lett., 34 (1998), pp. 452-453.
135.) R. Schmid, T.F. Meister, M. Rest and H.-M. Rein: „23 Gbit/s SiGe modulator driver with 3.5 V single-ended output swing - design aspects and measuring results“, IEEE Workshop on MMIC Design, Packaging, and System Applications, Freiburg (Germany), Oct. 1998, Proc. pp. 87-88.
136.) R. Schmid, T.F. Meister, M. Rest and H.-M. Rein: „40 Gbit/s EAM driver IC in SiGe bipolar technology“, Electron. Lett., 34 (1998), pp. 1095-1097.
137.) H.-M. Rein: „Complete SiGe bipolar chipset for a 40 Gb/s optical-fiber TDM link“ (invited paper), Ninth Annual Workshop on Interconnections Within High Speed Digital Systems, Santa Fe, New Mexico, USA, May 1998.
138.) M. Möller, T.F. Meister, R. Schmid, J. Rupeter, M. Rest, A. Schöpflin and H.-M. Rein: „SiGe high-gain retiming power MUX for directly driving an EAM up to 50 Gbit/s“, Electron. Lett., 34 (1998), pp. 1782-1783.
139.) M. Pfost, H.-M. Rein und A. Stürmer: “Simulation der Substratkoppelung in schnellen integrierten Bipolarschaltungen”, Analog '99 – Entwicklung von Analogschaltungen mit CAE-Methoden, München, Feb.1999, Proc. pp. 64-65, Sonderband ISSN 0944 – 3819 (Band 5, W. John (Hrsg.)), pp.195-2002.
140.) H.-M. Rein und U. Langmann: “Grenzen ausloten: Chips für Weltrekorde”, Rubin 1998, Heft 1, pp. 41-47.
141.) H.-M. Rein: „Si and SiGe bipolar ICs for 10 to 40 Gb/s optical-fiber TDM links“, (invited paper), International Journal of High Speed Electronics and Systems; Vol. 9 (1998), No 2, pp. 347-383, Special Issue on: „High Speed Electronics and Systems for Lightwave Communications“ as well as in "High-speed Circuits for Lightwave Communications" edited by K. C. Wang, in „Selected Topics in Electronics and Systems“, Vol. 13, edited by P. K. Tien, World Scientific Publishing, Singapore, 1999.
142.) S. Wilms and H.-M. Rein: „Analytical high-current model for the transit time of SiGe HBTs“, IEEE 1998 Bipolar/ BICMOS Circuits and Technology Meeting, Mineapolis, Sept. 1998, Proc., pp. 199-202.
143.) M. Friedrich and H.-M. Rein: „Analytical current-voltage relations for compact SiGe HBT models“, IEEE Trans. Electron Devices, 46 (1999), part I: pp. 1384-1393, part II: pp. 1394-1401.
144.) M. Schröter, H.-M. Rein, W. Rabe, R. Reimann, A. Wassener, A. Koldehoff: „Physics- and process-based bipolar transistor modeling for integrated circuit design“, IEEE J. Solid-State Circuits, 34 (1999), pp. 1136-1149.
145.) R. Schmid, T.F. Meister, M. Rest and H.-M. Rein: "SiGe driver circuit with high output amplitude operating up to 23 Gb/s", IEEE J. Solid-State Circuits, 34 (1999), pp. 886-891.
146.) M. Pfost, H.-M. Rein, W. Steiner and A. Stürmer: "Simulation of substrate coupling with special regard to shielding in high-speed Si/SiGe bipolar ICs", 29th European Microwave Conference, Munich, Germany, October 1999, Proc. Vol. 2, pp. 133-136.
147.) J. Müllrich, E. Müllner, J.F. Jensen, B. Stanchina, M. Kardos, H. Thurner and H.-M. Rein: "High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40 Gb/s optical-fiber TDM links", 1999 IEEE GaAs IC Symposium, Monterey, USA, October 1999, Proc. pp. 99-102.
148.) M. Möller, H.-M. Rein, E. Gottwald and T.F. Meister (invited paper): "SiGe bipolar ICs with data rates from 40 to 60 Gb/s for future fiber-optic systems", GAAS ´99 (European Microwave Week), Munich, Germany, October 1999, Proc. pp. 344-349.
149.) M. Rickelt and H.-M. Rein: "Impact ionization induced instabilities in high-speed bipolar transistors and their influence on the maximum usable output voltage", IEEE 1999 Bipolar Circuits and Technology Meeting (BCTM), Minneapolis, Sept. 1999, Proc. pp. 54-57.
150.) J. Müllrich, W. Klein, R. Khlifi, and H.-M. Rein: "A SiGe regenerative frequency divider operating up to 63 GHz", Electron. Lett., 35 (1999), pp. 1730-1731.
151.) H.-M. Rein: „SiGe bipolar ICs for 40 Gb/s fiber-optic TDM transmission systems“, Symposium on Opto- and Microelectronic Devices (SODC), Nanjing, China, April 2000, proc. pp. 9-12.
152.) J. Müllrich, E. Müllner, J.F. Jensen, B. Stanchina, M. Kardos, H. Thurner and H.-M. Rein: "High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40 Gb/s optical-fiber TDM links", IEEE J. Solid-State Circuits, 35 (2000), pp.1260-1265.
153.) W. Steiner, M. Pfost, H.-M. Rein, A. Stümer: “Modellierung und Messung des Substrateinflusses in schnellen integrierten Bipolarschaltungen”, Entwurf integrierter Schaltungen, 10. E.I.S.-Workshop, Dresden, April 2001, ITG-Fachberichte 164, pp. 81-86 (Tagung E.I.S. 2001).
154.) M. Rickelt, H.-M. Rein and E.Rose: „Influence of impact-ionization induced instabilities on the maximum usable output voltage of Si bipolar transistors’’, IEEE Trans. on Electron Devices, 48 (2001), pp. 774-783.
155.) M. Rickelt and H.-M. Rein: „An accurate transistor model for simulating avalanche-breakdown effects in Si bipolar circuits”, IEEE 2001 Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, Oct. 2001, Proc. pp. 34-37.
156.) W. Steiner, M. Pfost, H.-M. Rein, A. Stürmer and A. Schüppen: „Methods for measurement and simulation of weak substrate coupling in high-speed bipolar ICs“, IEEE Trans. Microwave Theory and Techniques, 50 (2002), pp. 1705-1713.
157.) H. Li, H.-M. Rein, R. Kreienkamp and W. Klein: „47 GHz VCO with low phase noise fabricated in a SiGe bipolar production“, IEEE Trans. Microwave and Wireless Component Letters, 12 (2002), pp. 79-81.
158.) H. Li and H.-M. Rein: „Millimeterwave VCOs with low phase noise and wide tuning range fully integrated in a SiGe bipolar production technology“, SODC 2002, Stuttgart, Germany, March 2002.
159.) M. Rickelt and H.-M. Rein: „A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits“, IEEE J. Solid-State Circuits, 37 (2002), pp. 1184-1197.
160.) A. Schild, H.-M. Rein, J. Müllrich, L. Altenhain, J. Blank and K. Schrödinger: „Amplifier array for 12 parallel 10 Gb/s optical-fiber links fabricated in a SiGe production technology“, IEEE 2002 RFIC Symposium, Seattle, June 2002, Proc. pp. 89-92.
161.) A.Schild, H.-M. Rein, J. Müllrich, L. Altenhain, J. Blank and K. Schrödinger: „High-gain SiGe trannsimpedance amplifier array for a 12 x 10 Gb/s parallel optical-fiber link“, IEEE J. Solid-State Circuits, 38 (2003), pp. 4-12.
162.) H. Li and H.-M. Rein: „Millimeter-wave VCOs with wide tuning range and low phase noise, fully intergrated in a SiGe production technology“, IEEE J. Solid-State Circuits, 38 (2003), pp. 184-191.
163.) W. Steiner, H.-M. Rein, A. Schild and J. Müllrich : „Reducing substrate coupling in 10 to 40 Gbit/s high-gain broadband amplifiers“, ESSCIRC 2002, Firenze, Italy, September 2002, pp. 299-302.
164.) H. Li, H.-M. Rein, R.-E. Makon and M. Schwerd: „Wide-band VCOs in SiGe production technology operating up to about 70 GHz“, IEEE Microwave and Wireless Comp. Letters, 13 (2003), pp. 425-427.
165.) H. Li, H.-M. Rein and M. Schwerd: „SiGe VCOs operating up to 88 GHz, also suited for automotive radar sensors”, Electron. Lett., 39 (2003), pp. 1326-1327.
166.) H. Li, H.-M. Rein and T. Suttorp: „Design of W-Band VCOs with high output power for potential application in 77 GHz automotive radar systems”, 2003 IEEE GaAs IC Symposium, San Diego, USA, November 2003, pp. 263-266.
167.) H. Li, H.-M. Rein, T. Suttorp and J. Böck: „Fully integrated SiGe VCOs with powerful output buffer for 77 GHz automotive radar systems and for applications around 100 GHz”, IEEE J.Solid-State Citcuits, 39 (2004), pp. 1650-1658.
168.) W. Steiner, H.-M. Rein and J. Berntgen: “Experimental verification of substrate coupling in a high-gain 30 Gb/s SiGe amplifier” IEEE 2004 Bipolar BiCMOS Circuits and Technology Meeting, Sept. 2004, Proc. pp. 273-276.
169.) D. Kuchta, Y. Kwark, C. Schuster, C. Baks, C. Haymes, J. Schaub, P. Pepeljugoski, L. Shan, R. John, D. Kucharski, D. Rogers, M. Ritter, J. Jewell, L. Graham, K. Schrödinger, A. Schild, H.-M. Rein: “120 Gb/s VCSEL-based parallel optical link and custom 120 Gb/s testing station“; Proc. Electronic Components and Technology Conference; Las Vegas, NV, Juni 2004, pp. 1003-1011.
170.) D. Kuchta, Y. Kwark, C. Schuster, C. Baks, C. Haymes, J. Schau, L. Shan, R. John, D. Kucharski, D. Rogers, M. Ritter, J. Jewell, L. Graham, K. Schrödinger, A. Schild, H.-M. Rein: "120 Gb/s VCSEL-based parallel optical interconnect and custom 120 Gb/s testing station", IEEE J. Lightwave Technology, 22 (2004), pp. 2200-2212.
171.) W. Steiner, H.-M. Rein, J. Berntgen: "Substate coupling in a high-gain 30 Gb/s SiGe amplifier – modeling, suppression, and measurement", IEEE J. Solid-State Circuits, 40 (2005), pp. 2035-2045.
172.) H.-P. Forstner, H. Knapp, C. Gamsjaeger, H.-M. Rein, J. Boeck, T. Meister, K. Aufinger: “A 19GHz VCO downconverter MMIC for 77GHz automotive radar frontends in a SiGe bipolar production technology”, IEEE European Radar Conference, Munich, 2007
173.) N. Pohl, H.-M. Rein, T. Musch, K. Aufinger, J. Hausner: "An 80GHz SiGe bipolar VCO with wide tuning range using two simultaneously tuned varactor pairs", 2008 IEEE CSIC Symposium, Monterey, USA, Oct. 2008, Dig. pp. 193-196.
174.) N. Pohl, H.-M. Rein, T. Musch, K. Aufinger, J. Hausner: "SiGe bipolar VCO with ultra-wide tuning range at 80GHz center frequency", IEEE J. Solid-State Circuits, 44 (2009), pp. 2655-2662.
175.) N. Pohl, H.-M. Rein, T. Musch, K. Aufinger, J. Hausner: “Investigation and reduction of frequency pulling in SiGe mm-wave VCOs at limited power consumption”, IEEE 2010 Bipolar BICMOS Circuits and Technology Meeting, Oct. 2010, Proc. pp. 69-72.
Lehrbuch: H.-M. Rein, R. Ranfft: “Integrierte Bipolarschaltungen“, Reihe “Halbleiter-Elektronik“, Springer, 1980.
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